zowie technology corporation general purpose transistor pnp silicon lead free product halogen-free type MMBT3906GH 1 2 1 2 3 3 sot-23 rating symbol value unit characteristic symbol min. max. unit collector-emitter voltage v ceo -40 vdc collector-base voltage v cbo -40 vdc emitter-base voltage v ebo -5.0 vdc collector current-continuous i c -200 madc characteristic symbol max. unit total device dissipation fr-5 board (1) t a =25 o c derate above 25 o c p d 225 1.8 mw mw / o c total device dissipation alumina substrate, (2) t a =25 o c derate above 25 o c p d v (br)cbo 300 2.4 -40 - mw mw / o c thermal resistance junction to ambient 556 o c / w maximum ratings thermal characteristics electrical characteristics (t a =25 o c unless otherwise noted) v (br)ceo -40 - vdc vdc off characteristics r ja thermal resistance junction to ambient 417 o c / w r ja junction and storage temperature collector-base breakdowe voltage ( i c = -10 uadc, i e =0 ) v (br)ebo -5.0 - vdc emitter-base breakdowe voltage ( i e = -10 uadc, i c =0 ) collector-emitter breakdowe voltage (3) ( i c =-1.0madc, i b =0 ) i bl - -50 nadc base cutoff current ( v ce = -30 vdc, v eb = -3.0 vdc ) i cex - -50 nadc collector cutoff current ( v ce = -30 vdc, v eb = -3.0 vdc ) -55 to +150 o c t j, t stg zowie t echnology corporation rev . 0 emitter base collector
zowie technology corporation characteristic symbol min. max. unit electrical characteristics (t a =25 o c unless otherwise noted) (continued) h fe 60 80 100 60 30 - - 300 - - - on characteristics (3) v ce (sat) vdc dc current gain ( i c = -0.1 madc, v ce= - 1.0 vdc ) ( i c = -1.0 madc, v ce= - 1.0 vdc ) ( i c = -10 madc, v ce= - 1.0 vdc ) ( i c = -50 madc, v ce= - 1.0 vdc ) ( i c = -100 madc, v ce= - 1.0 vdc ) collector-emitter saturation voltage (3) ( i c = -10 madc, i b =-1.0 madc ) ( i c = -50 madc, i b = -5.0 madc ) - - -0.25 -0.4 v be (sat) vdc base-emitter saturation voltage (3) ( i c = -10 madc, i b = -1.0 madc ) ( i c = -50 madc, i b = -5.0 madc ) -0.65 - -0.85 -0.95 f t c obo 250 - - 4.5 mh z small-signal characteristic c ibo pf pf current-gain-bandwidth product ( i c = -10 madc, v ce = -20 vdc, f=100 mh z ) output capacitance ( v cb = -5.0 vdc, i e =0, f=1.0 mh z ) input capacitance ( v eb = -0.5 vdc, i c =0, f=1.0 mh z ) input impedance ( v ce = -10 vdc, i c = -1.0 madc, f=1.0 kh z ) - 10 h ie k ohms 2.0 12 voltage feedback ratio ( v ce = -10 vdc, i c = -1.0 madc, f=1.0 kh z ) h re x 10 -4 0.1 10 small-signal current gain ( v ce = -10 vdc, i c = -1.0 madc, f=1.0 kh z ) h fe - 100 400 output admittance ( v ce = -10 vdc, i c = -1.0 madc, f=1.0 kh z ) h oe u mhos 3.0 60 noise figure ( v ce = -5.0 vdc, i c = -100 uadc, r s =1.0 k ohm, f=1.0 kh z ) n f db - 4.0 tr td - 35 switching characteristics ts ns rise time delay time storage time - 35 tf ns fall time ( v cc = -3.0 vdc, v be = -0.5 vdc, i c = -10 madc, i b1 = -1.0 madc ) ( v cc = -3.0 vdc, i c = -10 madc, i b1 =i b2= - 1.0 madc ) - - 225 75 (1) fr-5=1.0 x 0.75 x 0.062in. (2) alumina=0.4 x 0.3 x 0.024in. 99.5% alumina. (3) pulse test : pulse width 300us, duty cycle 2.0%. zowie t echnology corporation rev . 0 MMBT3906GH
zowie technology corporation rev. 0 zowie technology corporation figure 1. delay and rise time equivalent test circuit figure 2. storage and fall time equivalent test circuit 3 v 275 10 k 1n916 c s < 4 pf* 3 v 275 10 k c s < 4 pf* < 1 ns 0.5 v 10.6 v 300 ns duty cycle = 2% < 1 ns 10.9 v +9.1 v duty cycle = 2% t 1 0 10 < t 1 < 500us * total shunt capacitance of test jig and connectors reverse bias ( volts ) 2.0 3.0 5.0 7.0 10 1.0 0.1 i c , collector current ( ma ) 5000 1.0 q, charge (pc) 3000 2000 1000 500 300 200 700 100 50 70 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 capacitance ( pf ) 1.0 2.0 3.0 5.0 7.0 10 20 30 40 0.2 0.3 0.5 0.7 c ibo c obo t j =25 o c t j =125 o c typical transient characteristics v cc =40 v i c /i b =10 figure 3. capacitance figure 4. charge data q t q a figure 5. turn-on time i c , collector current ( ma ) 70 100 200 300 500 50 figure 6. fall time i c , collector current ( ma ) time (ns) 1.0 2.0 3.0 10 20 70 5 100 t r , rise time ( ns ) 5.0 7.0 30 50 200 10 30 7 20 70 100 200 300 500 50 1.0 2.0 3.0 10 20 70 5 100 5.0 7.0 30 50 200 10 30 7 20 t d @ v ob =0 v t r @ v cc =3.0 v i c /i b =10 40 v 15 v 2.0 v v cc =40 v i b1= i b2 i c /i b =20 i c /i b =10 MMBT3906GH
zowie technology corporation rev. 0 zowie technology corporation figure 7. f, frequency (khz) 2.0 3.0 4.0 5.0 1.0 nf, noise figure ( bb ) 0 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 figure 8. r s , source resistance ( k ohms ) 0 4 6 8 10 12 2 nf, noise figure ( bb ) 0.1 1.0 2.0 4.0 10 20 40 0.2 0.4 100 source resistance=200 i c =1.0 ma source resistance=200 i c =0.5 ma source resistance=2.0 k source resistance=2.0 k i c =50ua f = 1.0 kh z i c =1.0 ma i c =0.5 ma i c =50 ua i c =100 ua typical transient characteristics noise figure variations (v ce = -5.0vdc, t a =25 o c, bandwidth=1.0h z ) h parameters (v ce = -10vdc, f=1.0 kh z , t a =25 o c) figure 9. current gain i c , collector current ( ma ) figure 10. output admittance figure 11. input impedance figure 12. voltage feedback ratio i c , collector current ( ma ) h fe , dc current gain h oe , outputadmittance (umhos) i c , collector current ( ma ) i c , collector current ( ma ) h re , voltage feedback ratio(x 10-4) h ie , input impedance (k ohms) 70 100 200 300 50 30 100 50 10 20 30 7 5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 2.0 3.0 5.0 7.0 10 1.0 0.5 0.7 2.0 5.0 10 20 1.0 0.2 0.5 0.1 0.2 1.0 2.0 5.0 10 0.3 0.5 3.0 0.1 0.2 1.0 2.0 5.0 7.0 10 0.3 0.5 0.7 3.0 MMBT3906GH
zowie technology corporation rev. 0 zowie technology corporation figure 17. " on " voltage figure 14. collector saturation region figure 16. temperature coefficients i c , collector current ( ma ) i c , collector current ( ma ) v, voltage ( volts ) i b , base current ( ma ) 0.4 0.6 0.8 1.0 0.2 0.1 v ce , collector emitter voltage (volts) 0.5 2.0 3.0 10 0.2 0.3 0 1.0 0.7 5.0 7.0 0.07 0.05 0.03 0.02 0.01 i c = 1.0 ma 10 ma 30 ma 100 ma t j = 25 o c 0.4 0.6 0.8 1.0 0.2 1.0 2.0 5.0 10 20 50 0 100 -0.5 0 0.5 1.0 0 60 80 120 140 160 180 20 40 100 200 -1.0 -1.5 -2.0 200 vb for v be (sat) vc for v ce (sat) +25 o c to +125 o c -55 o c to +25 o c -55 o c to +25 o c +25 o c to +125 o c v be(sat) @ i c /i b =10 v ce(sat) @ i c /i b =10 v be @ i ce =1.0 v figure 13. dc current gain i c , collector current ( ma ) 0.3 0.5 0.7 1.0 2.0 0.2 0.1 h fe , dc current gain (normalized) 0.5 2.0 3.0 10 50 70 0.2 0.3 0.1 100 1.0 0.7 200 30 20 5.0 7.0 typical static characteristics t j = +25 o c t j = -55 o c t j = +125 o c v ce =1.0v v , temperature coefficients (mv / o c) MMBT3906GH
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